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| FAN73711 -- High-Current, High-Side Gate Drive IC June 2009 FAN73711 High-Current, High-Side Gate Drive IC Features Floating Channel for Bootstrap Operation to +600V 4A/4A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V and 5V Input Logic Compatible Output In-phase with Input Signal Under-Voltage Lockout for VBS Built-In Shunt Regulator on VDD and VBS 8-Lead Small Outline Package (SOP) Description The FAN73711 is a monolithic high-side gate drive IC that can drive high-speed MOSFETs and IGBTs operating up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Fairchild's high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. The high-current and low-output voltage drop feature makes this device suitable for sustain and energyrecovery circuit switches driver in the plasma display panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications. 8-SOP Applications High-Speed Gate Driver Sustain Switch Driver in PDP Application Energy Recovery Circuit Switch Driver in PDP Application High-Power Buck Converter Motor Drive Inverter Ordering Information Part Number FAN73711M FAN73711MX Operating Temperature Range 40C ~ 125C Package 8-SOP Eco Status RoHS Packing Method Tube Tape and Reel For Fairchild's definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com FAN73711 -- High-Current, High-Side Gate Drive IC Typical Application Diagrams 15V VS 15V RBOOT1 DBOOT1 Q3 R3 7 CBOOT3 8 7 CBOOT1 VS NC 6 5 DBOOT2 R1 D1 D2 D4 R4 L1 5 6 D3 DBOOT3 RBOOT3 FAN73711 8 VB HO VS NC VDD 1 IN 2 FAN73711 1 VDD IN VB HO IN3 NC 3 GND 4 IN1 2 3 NC 4 GND To Panel R2 FAN73711 1 VDD IN VB HO VS NC 8 R5 Q1 8 VB Q2 Q4 R7 7 CBOOT2 R6 R8 6 5 C2 FAN73711 VDD 1 IN 2 C3 IN2 C1 2 7 6 5 HO VS NC IN4 3 NC 4 GND NC 3 GND 4 Energy Recovery System Sustain Drive Part FAN73711 Rev.01 Figure 1. Floated Bi-Directional Switch and Half-Bridge Driver: PDP Application 15V RBOOT DBOOT VIN FAN73711 1 VDD PWM C1 VB 8 R1 2 IN 3 NC 4 GND HO 7 CBOOT R2 L1 VS 6 NC 5 D1 C2 VOUT FAN73711 Rev.01 Figure 2. Step-Down (Buck) DC-DC Converter Application (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 2 FAN73711 -- High-Current, High-Side Gate Drive IC Internal Block Diagram VDD GND 1 4 VDD UVLO Shoot-through current compensated gate driver 8 VB IN 2 110K NOISE CANCELLER R S R Q 7 HO Pin 3 and 5 are no connection. FAN73711 Rev.01 PULSE GENERATOR 6 VS Figure 3. Functional Block Diagram Pin Configuration VDD IN NC GND 1 2 8 7 VB HO VS NC FAN73711 3 4 6 5 FAN73711 Rev.01 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # 1 2 3 4 5 6 7 8 Name VDD IN NC GND NC VS HO VB Supply Voltage Description Logic Input for High-Side Gate Driver Output No Connection Ground No Connection High-Voltage Floating Supply Return High-Side Driver Output High-Side Floating Supply (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 3 FAN73711 -- High-Current, High-Side Gate Drive IC Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified. Symbol VS VB VHO VDD VIN dVS/dt PD JA TJ TSTG Characteristics High-Side Floating Offset Voltage (1) Min. VB-VSHUNT -0.3 VS-0.3 Max. VB+0.3 625.0 VB+0.3 VSHUNT VDD+0.3 50 0.625 200 Unit V V V V V V/ns W C/W C C High-Side Floating Supply Voltage High-Side Floating Output Voltage Low-Side and Logic Supply Voltage Logic Input Voltage Allowable Offset Voltage Slew Rate Power Dissipation(2, 3, 4) Thermal Resistance Junction Temperature Storage Temperature (1) -0.3 -0.3 -55 -55 +150 +150 Notes: 1. 2. 3. This IC contains a shunt regulator on VDD and VBS . This supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the electrical characteristics section. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. Do not exceed power dissipation (PD) under any circumstances. 4. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol VB VS VHO VIN VDD TA Parameter High-Side Floating Supply Voltage High-Side Floating Supply Offset Voltage High-Side Output Voltage Logic Input Voltage Supply Voltage Operating Ambient Temperature Min. VS+10 6-VDD VS GND 10 -40 Max. VS+20 600 VB VDD 20 +125 Unit V V V V V C (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 4 FAN73711 -- High-Current, High-Side Gate Drive IC Electrical Characteristics VBIAS(VDD, VBS)=15.0V, TA = 25C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Test Condition VIN=0V or 5V fIN=20KHz, No Load VBS=Sweep VBS=Sweep VBS=Sweep VB=VS=625V VIN=0V or 5V CLOAD=1000pF, fIN=20KHz, rms Value VDD=Sweep or VBS=Sweep ISHUNT=5mA Min. Typ. Max. Unit 25 35 70 100 A A Power Supply Section Quiescent VDD Supply Current IQDD IPDD Operating VDD Supply Current Bootstrapped Supply Section VBS Supply Under-Voltage Positive-Going VBSUV+ Threshold Voltage VBS Supply Under-Voltage Negative-Going VBSUVThreshold Voltage VBS Supply Under-Voltage Lockout VBSHYS Hysteresis Voltage ILK IQBS IPBS Offset Supply Leakage Current Quiescent VBS Supply Current Operating VBS Supply Current 8.0 7.3 9.0 8.3 0.7 10.0 9.3 V V V 10 60 470 120 800 A A A Shung Regulator Section VSHUNT VDD and VBS Shunt Regulator Clamping Voltage 21 23 25 V Input Logic Section VIH Logic "1" Input Voltage VIL Logic "0" Input Voltage IIN+ IINLogic Input High Bias Current Logic Input Low Bias Current VIN=5V VIN=0V 2.5 0.8 40 90 No Load 3 3 4 4 -9.8 -7.0 110 1.2 30 65 2 V V A A K V mV A A V RIN Input Pull-Down Resistance Gate Driver Output Section High Level Output Voltage (VBIAS - VO) VOH VOL IO+ IOVS Low Level Output Voltage No Load Output High, Short-Circuit Pulsed Current(5) VHO=0V, VIN=5V, PW 10s Output Low, Short-Circuit Pulsed Current(5) VHO=15V,VIN=0V, PW 10s Allowable Negative VS Pin Voltage for IN Signal Propagation to HO Note: 5. These parameters guaranteed by design. Dynamic Electrical Characteristics VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25C, unless otherwise specified. Symbol ton toff tr tf Parameter Turn-On Propagation Delay Time Turn-Off Propagation Delay Time Turn-On Rise Time Turn-Off Fall Time VS=0V VS=0V Conditions Min. Typ. 150 150 25 15 Max. 210 210 50 40 Unit ns ns ns ns (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 5 FAN73711 -- High-Current, High-Side Gate Drive IC Typical Characteristics 200 180 200 180 tOFF [ns] tON [ns] 160 140 120 100 -40 -20 0 20 40 60 80 100 120 160 140 120 100 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 5. Turn-On Propagation Delay vs. Temperature Figure 6. Turn-Off Propagation Delay vs. Temperature 50 50 40 40 tR [ns] tF [ns] 30 30 20 20 10 10 0 -40 -20 0 20 40 60 80 100 120 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 7. Turn-On Rise Time vs. Temperature Figure 8. Turn-Off Fall Time vs. Temperature 100 100 75 75 IQDD [ A] IQDD [ A] 50 50 25 25 0 -40 -20 0 20 40 60 80 100 120 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 9. Quiescent VDD Supply Current vs. Temperature Figure 10. Quiescent VBS Supply Current vs. Temperature (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 6 FAN73711 -- High-Current, High-Side Gate Drive IC Typical Characteristics (Continued) 100 800 80 600 IPDD [ A] 60 IPBS [ A] -20 0 20 40 60 80 100 120 400 40 20 200 0 -40 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 11. Operating VDD Supply Current vs. Temperature Figure 12. Operating VBS Supply Current vs. Temperature 10.0 9.5 9.5 9.0 VBSUV+ [V] VBSUV- [V] -20 0 20 40 60 80 100 120 8.5 9.0 8.0 8.5 7.5 8.0 -40 7.0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 13. VBS UVLO+ vs. Temperature Figure 14. VBS UVLO- vs. Temperature 1.2 30 25 0.9 VOH [V] 0.6 VOL [mV] -20 0 20 40 60 80 100 120 20 15 10 0.3 5 0.0 -40 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 15. High-Level Output Voltage vs. Temperature Figure 16. Low-Level Output Voltage vs. Temperature (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 7 FAN73711 -- High-Current, High-Side Gate Drive IC Typical Characteristics (Continued) 2.5 2.5 2.0 2.0 VIH [V] 1.5 VIL [V] -20 0 20 40 60 80 100 120 1.5 1.0 1.0 0.5 -40 0.5 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 17. Logic High Input Voltage vs. Temperature Figure 18. Logic Low Input Voltage vs. Temperature -7 60 50 -8 IIN+ [ A] VS [V] -20 0 20 40 60 80 100 120 40 30 20 10 0 -40 -9 -10 -11 -12 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 19. Logic Input High Bias Current vs. Temperature Figure 20. Allowable Negative VS Voltage vs. Temperature 25 24 VSHUNT [V] 23 22 21 -40 -20 0 20 40 60 80 100 120 Temperature [C] Figure 21. Shunt Regulator Clamping Voltage vs. Temperature (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 8 FAN73711 -- High-Current, High-Side Gate Drive IC Switching Time Definitions Timing Diagram 15V 50% 50% VDD 10nF 10F VB 10F 0.1F 15V IN ton tr toff tf VS GND FAN73711 1000pF 90% 90% IN HO OUT 10% 10% FAN73711 Rev.01 Figure 22. Switching Time Test Circuit and Waveform Definitions (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 9 FAN73711 -- High-Current, High-Side Gate Drive IC Package Dimensions 5.00 4.80 3.81 8 5 A 0.65 B 6.20 5.80 4.00 3.80 1 4 1.75 5.60 PIN ONE INDICATOR (0.33) 1.27 0.25 M CBA 1.27 LAND PATTERN RECOMMENDATION 0.25 0.10 1.75 MAX C 0.10 0.51 0.33 0.50 x 45 0.25 C SEE DETAIL A 0.25 0.19 OPTION A - BEVEL EDGE R0.10 R0.10 GAGE PLANE 0.36 OPTION B - NO BEVEL EDGE NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M. E) DRAWING FILENAME: M08AREV13 8 0 0.90 0.406 (1.04) DETAIL A SCALE: 2:1 SEATING PLANE Figure 23. 8-Lead Small Outline Package (SOP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 10 FAN73711 -- High-Current, High-Side Gate Drive IC (c) 2009 Fairchild Semiconductor Corporation FAN73711 * Rev. 1.0.0 www.fairchildsemi.com 11 |
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